新能源汽車、5G通信等產業(yè)的高速發(fā)展，推動碳化硅（SiC）襯底需求持續(xù)攀升，而大尺寸、高良率晶體生長技術成為全球半導體裝備領域的核心競爭方向。
山東力冠微電子裝備有限公司繼8英寸液相法SiC長晶爐量產后，正加速攻關12英寸液相法SiC長晶設備，依托自主研發(fā)的工藝體系，為我國半導體裝備國產化進程注入新動能。

液相法SiC長晶技術解析

 

 

 

 

相較于主流物理氣相傳輸法（Physical Vapor Transport, PVT），頂部籽晶溶液生長( top seeded solution growth，TSSG)（最廣泛采用的一種液相法）基于高溫金屬熔融體系溶解碳化硅前驅體，通過溶質分凝與過飽和度調控在籽晶界面定向外延生長，展現(xiàn)出顯著的技術優(yōu)勢：

生長速率提升：實驗室條件下，液相法生長速率通常為0.3-1.5 mm/h，較PVT法的 0.1-0.5 mm/h 提升約1.5-3倍。

能耗優(yōu)化：液相法生長溫度較PVT法降低 300-500℃（1500-1800℃ vs 2000-2300℃），理論能耗減少 20%-30%。

缺陷控制能力：液相法通過溶液環(huán)境抑制熱應力與缺陷擴展，實驗室環(huán)境下其位錯密度可降至<1×10? cm?²（部分案例<200 cm?²），顯著優(yōu)于PVT法的常規(guī)水平（>5×10? cm?²）。

擴徑潛力：液相法基于動態(tài)調控技術更易實現(xiàn)大尺寸晶體生長，而PVT法因氣相傳輸對熱場均勻性要求極高，擴徑周期長且邊緣缺陷問題突出。

p型摻雜優(yōu)勢：液相法低溫溶液體系可精準調控鋁（Al）摻雜，實現(xiàn)電阻率低至 0.1 Ω·cm（PVT法約2.5 Ω·cm）。

技術挑戰(zhàn)：液相法需精準控制熔融液成分、溫度梯度及籽晶界面穩(wěn)定性，工藝參數耦合度高，對設備設計和工藝經驗要求嚴苛。

山東力冠12英寸SiC液相法長晶爐核心優(yōu)勢 

 

 

 

大尺寸與高良率協(xié)同：設備支持12英寸SiC單晶生長，通過多溫區(qū)協(xié)同控制技術，實現(xiàn)生長界面溫度梯度高精度控制，破解晶型混雜和晶體開裂難題。

自主可控的技術體系 ：采用特殊坩堝設計與惰性氣體保護系統(tǒng)，避免雜質污染，降低雜質殘留。其自主研發(fā)的全閉環(huán)控制生長系統(tǒng)，可實時監(jiān)控生長速率與重量等相關問題。

山東力冠的技術積累與市場驗證

 

 

 

山東力冠產品涵蓋第一代至第四代半導體材料工藝設備，均擁有自主知識產權，完全自主可控，產品廣泛應用于集成電路、功率半導體、化合物半導體、5G芯片、光通信、MEMS等新型電子器件制造領域。
公司可為客戶提供“設備制造+工藝技術服務”一體化解決方案。其關鍵技術打破美日壟斷，實現(xiàn)國產化替代，生產工藝穩(wěn)定性、均勻性達國際領先水平。部分拳頭產品國內市占率達95%，并出口韓國、新加坡等國家。

行業(yè)價值與未來展望

 

 

 

12英寸液相法設備的推出，標志著國產半導體裝備在SiC領域實現(xiàn)從進口替代到自主創(chuàng)新的關鍵跨越。通過技術迭代與產業(yè)鏈協(xié)同，山東力冠正推動國產裝備向高附加值環(huán)節(jié)延伸，為第三代半導體產業(yè)的規(guī)模化應用提供核心裝備支撐。

Major Breakthrough in Domestic Semiconductor Equipment! Shandong Liguan Microelectronics Equipment Co., Ltd. Launches 12-inch Liquid Phase SiC Crystal Growth Furnace

The rapid development of new energy vehicles, 5G communications and related industries has driven sustained growth in demand for silicon carbide (SiC) substrates, making large-diameter, high-yield crystal growth technology a core competitive focus in global semiconductor equipment.

Following the mass production of its 8-inch LPE method SiC crystal growth furnace, Shandong Liguan Microelectronics Equipment Co., Ltd. (hereinafter referred to as "Shandong Liguan") is now accelerating R&D on 12-inch LPE method SiC growth equipment. Leveraging its independently developed process systems, the company is injecting new momentum into China's semiconductor equipment localization efforts.

In-Depth Analysis of LPE method SiC Crystal Growth Technology

Compared to the mainstream Physical Vapor Transport method (PVT), the Top Seeded Solution Growth technique (TSSG) - the most widely adopted liquid-phase method - demonstrates remarkable technical advantages through its unique working mechanism:

Growth Rate Enhancement:
Under laboratory conditions, the liquid-phase method achieves growth rates of 0.3-1.5 mm/h, representing a 1.5-3× improvement over PVT's 0.1-0.5 mm/h range.

Energy Efficiency Optimization:
The liquid-phase process operates at 300-500°C lower temperatures (1500-1800°C vs. PVT's 2000-2300°C), theoretically reducing energy consumption by 20-30%.

Defect Control Capability:
The solution environment inherently suppresses thermal stress and defect propagation, achieving dislocation densities <1×10? cm?² in lab conditions (exceptional cases <200 cm?²) - significantly superior to PVT's typical （>5×10? cm?²）.

Diameter Scaling Potential:
Dynamic control technologies in liquid-phase growth enable easier large-diameter crystal production, whereas PVT's vapor transport mechanism

demands extreme thermal field uniformity, resulting in prolonged scaling cycles and pronounced edge defects.

p-Type Doping Advantage:
The low-temperature solution system allows precise aluminum (Al) doping control, achieving resistivities as low as 0.1 Ω·cm (vs. ~2.5 Ω·cm for PVT).

Technical Challenges:
The liquid-phase method requires exacting control of Melt composition，Temperature gradients，Seed crystal interface stability With highly coupled process parameters demanding advanced equipment design and extensive process expertise.

Key strengths of Shandong Liguan's12-inch SiC liquid-phase epitaxy (LPE) method growth furnace.

Synergy of Large Size and High Yield: The equipment supports the growth of 12-inch SiC single crystals. Through multi-temperature zone collaborative control technology, it achieves high-precision control of the temperature gradient at the growth interface, solving the problems of crystal form mixing and crystal cracking.

Self-Developed and Controllable Technology System: Special crucible design and inert gas protection system are adopted to prevent impurity contamination and reduce impurity residue. Its independently developed full closed-loop control growth system can monitor in real time issues such as growth rate and weight.

Shandong Liguan's Technological Expertise and Market Validation

Shandong Liguan's products cover the first to the fourth generation of semiconductor material process equipment, all of which have independent intellectual property rights and are fully controllable. The products are widely used in the manufacturing fields of new electronic devices such as integrated circuits, power semiconductors, compound semiconductors, 5G chips, optical communications, and MEMS.

The company can provide customers with an integrated solution of "equipment manufacturing + process technology services". Its key technologies have broken the monopoly of the United States and Japan, achieving domestic substitution, and the stability and uniformity of its production process have reached the international leading level. Some of our flagship products have a domestic market share of 95% and are exported to countries such as South Korea and Singapore.

Industry Value and Future Prospects

The launch of 12-inch liquid-phase epitaxy (LPE) method growth equipment marks a pivotal leap for domestic semiconductor tools in SiC – from import substitution to autonomous innovation. Through technological iteration and industrial chain collaboration, Shandong Liguan is advancing domestic equipment into high-value segments, providing core manufacturing support for the scaled application of third-generation semiconductors.